Infineon IPD30N06S2L13ATMA4 Power MOSFET: Datasheet, Pinout, and Application Circuit
The Infineon IPD30N06S2L13ATMA4 is a state-of-the-art N-channel power MOSFET engineered using Infineon's advanced OptiMOS™ technology. This device is designed to deliver exceptional efficiency, high robustness, and superior switching performance in a compact SuperSO8 package. It is an ideal solution for a wide range of low-voltage, high-frequency applications, particularly in the automotive and industrial sectors where reliability is paramount.
Key Datasheet Specifications and Features
A thorough review of the datasheet reveals the outstanding performance characteristics that define this component. Key electrical parameters include:
Drain-Source Voltage (VDS): 60 V
Continuous Drain Current (ID): Up to 30 A at 25°C
On-Resistance (RDS(on)): A remarkably low 3.0 mΩ (max) at VGS = 10 V, which is a primary factor for its high efficiency as it minimizes conduction losses.
Gate Threshold Voltage (VGS(th)): Typically 2.3 V
Total Gate Charge (Qg): Low gate charge of 47 nC (typ), enabling fast switching speeds and reducing driving losses.
AEC-Q101 Qualified: This certification confirms its suitability for demanding automotive applications, ensuring it meets stringent quality and reliability standards.
The device is also characterized by its high avalanche ruggedness and an integrated source-drain diode, making it highly robust against voltage spikes and inductive switching events.
Pinout Configuration (SuperSO8 Package)
The IPD30N06S2L13ATMA4 is housed in a space-saving SuperSO8 (SSO-8) package. This package features eight pins, but it is important to note that the four drain pins (D1, D2, D3, D4) are internally connected to a single large drain tab. Similarly, the four source pins (S1, S2, S3, S4) are also interconnected. This design significantly reduces the package's RDS(on) and improves thermal performance by providing multiple paths for current and heat dissipation.
The standard pinout is as follows:
Pins 1, 2, 7, 8: These are the Source (S) pins.
Pins 3, 4, 5, 6: These are the Drain (D) pins.
The Gate (G) connection is located on the top side of the package, separate from the high-current pins.
Typical Application Circuit: Synchronous Buck Converter
A common application for the IPD30N06S2L13ATMA4 is as the low-side switch in a synchronous buck converter circuit, a core topology for DC-DC voltage step-down conversion.
In this configuration:
1. A high-side MOSFET (often a similar OptiMOS™ device) and the IPD30N06S2L13ATMA4 as the low-side MOSFET are connected in a half-bridge arrangement.
2. The converter's PWM controller drives both gates with complementary signals.
3. When the high-side switch is on, the low-side switch (our MOSFET) is off, and current flows from the input to the output inductor and load.
4. When the high-side switch turns off, the low-side switch turns on, providing a low-resistance path for the inductor current to circulate.
5. The extremely low RDS(on) of the IPD30N06S2L13ATMA4 is critical here, as it minimizes power loss during this freewheeling phase, directly boosting the overall efficiency of the power supply.
This circuit is fundamental in systems like automotive power modules, point-of-load (POL) converters, and motor drive controllers.
The Infineon IPD30N06S2L13ATMA4 stands out as a superior component for modern power design. Its combination of an extremely low on-resistance, high current capability, and AEC-Q101 qualification makes it an exceptionally efficient and reliable choice. Designers can leverage its fast switching performance and robust construction to create compact, high-efficiency, and reliable power systems for automotive and industrial environments.
Keywords:
Power MOSFET
OptiMOS™
Low RDS(on)
AEC-Q101
Synchronous Buck Converter
