Infineon IPD50R1K4CE: A High-Performance 500V CoolMOS™ CE Power Transistor

The relentless pursuit of higher efficiency and power density in modern electronics demands continuous innovation in power semiconductor technology. Addressing this need, the Infineon IPD50R1K4CE stands out as a premier 500V power transistor engineered within the revolutionary CoolMOS™ CE technology platform. This device is specifically designed to set new benchmarks in performance for a wide array of switch-mode power supplies (SMPS) and applications.

A core highlight of the IPD50R1K4CE is its exceptionally low effective dynamic loss, achieved through a significant reduction in gate charge (Qg) and miller charge (Qgd). This characteristic is paramount for high-frequency switching operations, as it directly translates to reduced switching losses. Designers can leverage this to push switching frequencies higher, enabling the use of smaller passive components like magnetics and capacitors, thereby increasing overall power density. Furthermore, the transistor boasts an ultra-low on-state resistance (R DS(on)) , which minimizes conduction losses. This combination of low switching and conduction losses ensures cooler operation and superior energy efficiency, even under heavy load conditions.

The benefits extend beyond raw performance metrics. The inherent advantages of the CoolMOS™ CE technology provide a high level of robustness and reliability. The technology offers an integrated fast body diode with excellent reverse recovery characteristics, which is crucial for hard-switching topologies like power factor correction (PFC) circuits. This feature enhances system reliability by mitigating stress during diode commutation. Its high dv/dt capability also simplifies gate drive design, contributing to a more stable and noise-immune system operation.

Typical applications for the IPD50R1K4CE are extensive, covering server and telecom power supplies, industrial motor drives, solar inverters, and lighting ballasts. Its 500V voltage rating provides a comfortable safety margin for universal mains applications (85 VAC – 305 VAC), making it a versatile and dependable choice for global power supply designs.

ICGOOODFIND: The Infineon IPD50R1K4CE is a top-tier 500V MOSFET that masterfully balances ultra-low switching and conduction losses. Its groundbreaking CoolMOS™ CE technology is the key to achieving unprecedented levels of efficiency and power density, making it an indispensable component for next-generation, high-performance power conversion systems.

Keywords: CoolMOS™ CE, High Efficiency, Low Gate Charge, Power Density, 500V MOSFET.