HMC554ALC3BTR: A 6-20 GHz GaAs pHEMT MMIC Medium Power Amplifier for High-Frequency Applications

Release date:2025-09-09 Number of clicks:106

**HMC554ALC3BTR: A 6-20 GHz GaAs pHEMT MMIC Medium Power Amplifier for High-Frequency Applications**

The relentless drive for higher data rates and more sophisticated radar and communication systems has pushed operational frequencies into the microwave and millimeter-wave spectrum. At the heart of these advanced systems lies the critical need for robust amplification. The **HMC554ALC3BTR**, a GaAs pHEMT MMIC (Gallium Arsenide pseudomorphic High Electron Mobility Transistor Monolithic Microwave Integrated Circuit) Medium Power Amplifier, stands out as a premier solution designed to meet the demanding requirements of modern high-frequency applications.

This amplifier is engineered to deliver exceptional performance across an ultra-broad instantaneous bandwidth from **6 GHz to 20 GHz**. This extensive range makes it an incredibly versatile component, suitable for a wide array of uses including point-to-point radio, satellite communications, electronic warfare (EW) systems, and military radar. Its broadband nature simplifies design complexity by often eliminating the need for multiple narrowband amplifiers, thereby reducing system size, weight, and power consumption (SWaP).

Fabricated using a high-reliability **0.15 µm GaAs pHEMT process**, the HMC554ALC3BTR achieves an outstanding balance of power and efficiency. It provides a typical **small-signal gain of 20 dB**, ensuring significant amplification of input signals. Crucially, it delivers a high **saturated output power (PSAT) of +27 dBm** and an output IP3 of +35 dBm, underscoring its capability as a true medium-power amplifier. This robust linearity and power handling are essential for maintaining signal integrity and minimizing distortion in complex modulation schemes.

The device requires a single positive supply of +5V, drawing a typical current of 220 mA, which contributes to a streamlined power management design. It is housed in a compact, RoHS-compliant **4x4 mm SMT leadless chip carrier (LCC) package**, making it ideal for high-volume, automated PCB assembly lines. The inclusion of on-chip bias networks further simplifies the external circuit requirements, allowing for a more compact and efficient system layout.

**ICGOOODFIND**: The HMC554ALC3BTR is a high-performance, broadband MMIC power amplifier that excels in gain, output power, and linearity. Its extensive frequency coverage and integration make it a superior choice for designers aiming to enhance capability and reduce SWaP in next-generation communication and radar systems.

**Keywords**: GaAs pHEMT, Medium Power Amplifier, 6-20 GHz, MMIC, Saturated Output Power.

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