Infineon IPD90R1K2C3: A High-Performance Power MOSFET for Efficient Switching Applications
The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. Addressing this need, the Infineon IPD90R1K2C3 stands out as a benchmark in high-performance N-channel power MOSFET technology. Engineered with Infineon's advanced OptiMOS™ process, this device is specifically optimized for high-efficiency switching applications, offering an exceptional blend of low losses, high robustness, and superior thermal performance.
A defining characteristic of the IPD90R1K2C3 is its extremely low on-state resistance (RDS(on)) of just 1.2 mΩ maximum at 10 V. This ultra-low resistance is paramount for minimizing conduction losses, which directly translates to reduced power dissipation and higher overall system efficiency. Whether deployed in a synchronous rectification stage or a primary switch, this attribute ensures that more power is delivered to the load and less is wasted as heat.
Complementing its low conduction losses are its outstanding switching characteristics. The device features low gate charge (Qg) and low figures of merit (FOMs like RDS(on) x Qg), which are critical for achieving high-frequency operation. This enables designers to increase switching frequencies, thereby reducing the size of passive components like inductors and capacitors without sacrificing performance. The result is the ability to create more compact, lighter, and cost-effective power solutions for applications such as server and telecom SMPS, OR-ing FETs, and motor drives.
Furthermore, the MOSFET is housed in a TO-leadless (TOLL) package, which is a key enabler for its high performance. This package offers an extremely low parasitic inductance and excellent thermal dissipation capabilities. The low-inductance design minimizes voltage overshoot and ringing during fast switching transients, enhancing system reliability. Its top-side cooling feature allows heat to be efficiently transferred away from the die directly to a heatsink, maximizing power handling in space-constrained environments.
Robustness is another cornerstone of its design. The IPD90R1K2C3 offers a high maximum drain current (ID) and avalanche ruggedness, ensuring reliable operation under demanding conditions and unexpected voltage spikes.
ICGOOODFIND: The Infineon IPD90R1K2C3 is a top-tier power MOSFET that sets a high standard for efficiency and performance. Its combination of an ultra-low 1.2 mΩ RDS(on), superior switching metrics, and the thermally efficient TOLL package makes it an ideal and robust choice for designers pushing the limits of power density and energy efficiency in modern switching power supplies and motor control systems.
Keywords: Power MOSFET, High Efficiency, Low RDS(on), Switching Applications, TOLL Package.
